Deformation Electrical Resistivity of Al-Ga Dilute Alloys in Strong Magnetic Fields
The choice of alloying addition type and its concentration level in the matrix of high purity aluminum is important to determine the optimal combination of electrical and mechanical properties of hyperconductor. From this point of view it is interesting to study dilute alloys of Al with Ga, which is isovalent to aluminum and has similar electronic structure and atom radius. Here we report the results of investigations of contributions to electrical resistivity and magnetoresistance of the Al-Ga alloys by lattice defects which are introduced in the alloy during low-temperature plastic deformation. Results of the investigations showed, that deformation part of electrical resistivity increases with mechanical stress increase, and weakly depends on temperature and alloying addition concentration. The analysis of electron — point defect and electron-dislocation scattering mechanisms evidences the anisotropic character of the last in strong magnetic fields.
KeywordsElectrical Resistivity Point Defect Strong Magnetic Field High Pure Aluminum Deformation Part
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