Deformation Electrical Resistivity of Al-Ga Dilute Alloys in Strong Magnetic Fields

  • S. E. Demyanov
  • A. A. Drozd
  • A. V. Petrov
  • M. L. Petrovskii
Part of the Advances in Cryogenic Engineering Materials book series (ACRE, volume 42)

Abstract

The choice of alloying addition type and its concentration level in the matrix of high purity aluminum is important to determine the optimal combination of electrical and mechanical properties of hyperconductor. From this point of view it is interesting to study dilute alloys of Al with Ga, which is isovalent to aluminum and has similar electronic structure and atom radius. Here we report the results of investigations of contributions to electrical resistivity and magnetoresistance of the Al-Ga alloys by lattice defects which are introduced in the alloy during low-temperature plastic deformation. Results of the investigations showed, that deformation part of electrical resistivity increases with mechanical stress increase, and weakly depends on temperature and alloying addition concentration. The analysis of electron — point defect and electron-dislocation scattering mechanisms evidences the anisotropic character of the last in strong magnetic fields.

Keywords

Electrical Resistivity Point Defect Strong Magnetic Field High Pure Aluminum Deformation Part 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    V.I. Gostischev, Cryoconductor of high pure aluminum, Fiz. Met. Metalloved. 62: 303 (1986).Google Scholar
  2. 2.
    V.I. Gostischev, S.E. Demyanov, and V.R. Sobol, Deformational scattering mechanism and distribution function of conduction electrons in aluminum, Fiz. Met. Metalloved 60: 71 (1985).Google Scholar
  3. 3.
    V.I. Gostischev, S.E. Demyanov, and M.L. Petrovskii, The use of recovery processes for increase of current carrying ability of cryoconducting aluminum, Fiz. Chim. Obrabotki Mater. 4: 119 (1987).Google Scholar
  4. 4.
    S.E. Demyanov, A.A. Drozd, A.V. Petrov, and S.P. Zakatov, Electrical characteristics of Al-Y dilute alloys under low-temperature plastic deformation, Adv. Cryog. Eng. (Materials). 40: 1377(1994).Google Scholar
  5. 5.
    V.I. Gostischev, A.V. Vahobov, E.F. Golov, V.N. Matveev, and M.L. Havkin, The influence of alloying on galvanomagnetic and strength properties of aluminum at low temperatures, Fiz. Met. Metalloved. 60: 508(1985).Google Scholar
  6. 6.
    S.E. Demyanov, A.A. Drozd, and M.L. Petrovskii, Electrical conductivity properties of aluminum at compex influence of mechanical load, magnetic field, and temperature, Fiz. Chim. Obrabotki Mater. 3: 117(1987).Google Scholar
  7. 7.
    R.W.K. Honeycombe, “The Plastic Deformation of Metals”, Edward Arnold Pubs., Ltd. (1968).Google Scholar
  8. 8.
    R. Dronard, J. Wachburn, and E.R. Parker, Recovery in single crystals of zink, J.Met. 5: 1226 (1953).Google Scholar
  9. 9.
    A. Kirin, A. Toneic, and A. Bonefacic, Change in the lattice parameters of aluminum under the influence of rapid quenching from the liquid state, Scr.Met. 3: 943 (1969).CrossRefGoogle Scholar
  10. 10.
    F.R. Fickett, A review of resistive mechanisms in aluminum. Cryogenics 10: 349 (1971).CrossRefGoogle Scholar
  11. 11.
    A.B. Pippard, The influence of small-angle scattering on metaliic conduction, Proc. Roy. Soc. A305: 291 (1968).CrossRefGoogle Scholar
  12. 12.
    T. Endo and T. Kino, Logarithmic temperature dependence of the electrical resistivity due to dislocations in metals, J.Phys.F: Met.Phys. 18: 2203 (1988).CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1996

Authors and Affiliations

  • S. E. Demyanov
    • 1
  • A. A. Drozd
    • 1
  • A. V. Petrov
    • 1
  • M. L. Petrovskii
    • 1
  1. 1.Institute of Physics of Solids and SemiconductorsMinskBelarus

Personalised recommendations