Transistor Mismatch: Evolution and Relevance

  • Anne Van den Bosch
  • Michiel Steyaert
  • Willy Sansen
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 761)

Abstract

Measuring the electrical characteristics of a set of transistors with the same gate-length and gate-width that are processed in the same technology, will not yield the same results. During the fabrication process small variations will occur that result in a statistical variation of the transistor properties. This variation depends on the dimensions of the matched component and its biasing conditions. This phenomenon is referred to as transistor mismatch.

Keywords

Threshold Voltage Test Structure Saturation Region Test Chip Mismatch Parameter 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 2004

Authors and Affiliations

  • Anne Van den Bosch
    • 1
  • Michiel Steyaert
    • 1
  • Willy Sansen
    • 1
  1. 1.K.U. LeuvenBelgium

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