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Investigation of the Energy Band Structure of Semiconductors by Differential Optical Methods

  • S. G. Dzhioeva
Part of the The Lebedev Physics Institute Series book series (LPIS)

Abstract

The electroreflection and thermoreflection spectra of GaAs single crystals were investigated in the 1.00–4.00 eV range at various temperatures. The results were used to determine the gaps between the energy bands and the values of the spin — orbit splitting of the valence band at the symmetry points Γ, L, and A of the Brillouin zone. Single crystals of CdTe were studied and it was found that the Coulomb interaction between electrons and holes should be allowed for in the electroreflection studies. The ground (n = 1) and the first excited (n = 2) exciton states were observed at liquid nitrogen temperature.

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Copyright information

© Springer Science+Business Media New York 1975

Authors and Affiliations

  • S. G. Dzhioeva

There are no affiliations available

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