Measurement and Modelling of the High-Voltage Devices

  • Hussein Ballan
  • Michel Declercq
Chapter

Abstract

The measured static and dynamic characteristics of the SVX devices are presented first, where the high-voltage capabilities and the reliability aspects are pointed out through the measurement data. On the basis of these results, a first order modelling is then performed for both devices in order to allow further the simulation of high-voltage integrated circuits. It consists of two macro-models in which discrete devices are combined with a low-voltage transistor to model the behaviour of the lightly doped drains. Finally, the handling of high-voltage power supplies in a standard low-voltage CMOS process, necessitates the use of special layout precautions against parasitic effects. These precautions are discussed in the last part of this chapter.

Keywords

Gate Voltage Depletion Layer Drain Voltage Guard Ring Saturation Mode 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media Dordrecht 1999

Authors and Affiliations

  • Hussein Ballan
    • 1
  • Michel Declercq
    • 1
  1. 1.Swiss Federal Institute of TechnologyLausanneSwitzerland

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