Design of High-Voltage Devices Using the SVX Technique

  • Hussein Ballan
  • Michel Declercq
Chapter

Abstract

A new high-voltage approach using a CMOS basis to extend the operating voltage without requiring any modification of the process steps is detailed in this chapter. It is the technological basis of this book, and will be called Smart Voltage eXtension (SVX). In order to carry out the design of the complementary high-voltage devices, the possibilities of implementing such devices by the use of existing technological layers are examined, and the main processing steps are presented. Two dimensional computer simulations are also performed to optimise the scaling of the high-voltage parameters, and to consider the reliability aspects.

Keywords

Depletion Layer Nitride Layer Gate Oxide Drain Voltage Doping Profile 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer Science+Business Media Dordrecht 1999

Authors and Affiliations

  • Hussein Ballan
    • 1
  • Michel Declercq
    • 1
  1. 1.Swiss Federal Institute of TechnologyLausanneSwitzerland

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