Measurements of basic nonlinearities of transistors

  • Piet Wambacq
  • Willy Sansen
Part of the The Kluwer International Series in Engineering and Computer Science book series (SECS, volume 451)

Abstract

In the absence of reliable transistor models and/or an accurate parameter extraction, one could consider to measure nonlinearity coefficients. This chapter concentrates on how higher-order derivatives of the transistor current can be measured accurately. The measurement results could be used in device parameter extraction. Only measurements on a bipolar transistor are presented in this chapter. The principles can be applied to MOS transistors as well.

Keywords

Collector Current Input Port Drain Current Measured Harmonic Bipolar Transistor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Copyright information

© Springer Science+Business Media New York 1998

Authors and Affiliations

  • Piet Wambacq
    • 1
  • Willy Sansen
    • 2
  1. 1.IMECLeuvenBelgium
  2. 2.Katholieke Universiteit LeuvenBelgium

Personalised recommendations