Design of RF Power Amplifiers in CMOS Technology

  • Alireza Shirvani
  • Bruce A. Wooley

Abstract

This chapter examines challenges faced in the design of CMOS radio-frequency power amplifiers. The implementation of radio-frequency circuits in CMOS has been the focus of research in academia for the past decade because of the potential economic benefits it provides compared to more expensive alternative technologies currently used by the industry. An overview of GaAs MESFET and GaAs HBT processes is provided along with a description of CMOS technology. A comparison of CMOS and GaAs HBT technologies follows, highlighting the merits and challenges accompanying each technology. The last section of the chapter is devoted to reviewing characteristics of passive elements integrated in CMOS technologies, with an emphasis on properties of interest to power amplifier design.

Keywords

CMOS Technology Spiral Inductor Polysilicon Layer GaAs MESFET Series Loss 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Copyright information

© Springer Science+Business Media New York 2003

Authors and Affiliations

  • Alireza Shirvani
  • Bruce A. Wooley

There are no affiliations available

Personalised recommendations