Recent Developments in BSIM for CMOS RF ac and Noise Modeling

  • Jeffrey J. Ou
  • Xiaodong Jin
  • Paul R. Gray
  • Chenming Hu

Abstract

A major barrier to the successful realization of commercial CMOS RF communication systems is the relatively slow progress in the development of CMOS RF compact models. This paper reviews the recent activities of the B SIM development team in addressing this need. Both RF ac and noise models based on BSIM3v3 were proposed and evaluated with 2-D simulations and experimental data. Good agreement has been achieved in the GHz range. These models will enable the accurate simulations of new emerging CMOS RF LSI communication systems using SPICE.

Keywords

Noise Figure Substrate Network Cordless Phone NMOS Device Gate Resistance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media Dordrecht 1999

Authors and Affiliations

  • Jeffrey J. Ou
    • 1
  • Xiaodong Jin
    • 1
  • Paul R. Gray
    • 1
  • Chenming Hu
    • 1
  1. 1.Department of Electrical Engineering and Computer SciencesUniversity of CaliforniaBerkeleyUSA

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