## Abstract

In this chapter, special-purpose SOI devices are described. Fully-Depleted Lean-Channel Transistors (DELTA), which are similar to double-gate SOI CMOS devices, are vertical SOI transistors. In the beginning of this chapter, DELTAs are presented. In order to improve the surface-scattering mobility of SOI PMOS devices, SiGe-channel SOI PMOS devices were reported. The SiGe-channel is assuming the concept from the heterojunction bipolar transistors (HBT) based on engineering bandgap narrowing. However, due to the SiGe quantum well introduced, the body effect is much more complicated than conventional SOI CMOS devices. In the following portion of this chapter, SiGe-channel SOI PMOS devices are described. SOI technology has also been used to integrate power devices. Owing to the buried oxide structure, SOI power devices are suitable for high-temperature operations. In this chapter, SOI DMOS devices are described. Recently, SOI technology has also been used to integrate BiCMOS devices. SOI MESFET and JFETs have also been created. In addition, single-electron transistors (SET) built on SOI SIMOX substrates have been realized. Amorphous and polysilicon thin-film transistors built on insulators have been used for LCD. In this chapter, these special-purpose SOI devices are described sequentially.

## Keywords

Threshold Voltage Gate Voltage Drain Current Potential Barrier Height Surface Electrostatic Potential## Preview

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