Abstract

Thin-film, fully depleted SOI MOSFETs and circuits present the following advantages over bulk devices:
  • absence of latchup

  • higher soft-error immunity 0 higher transconductance

  • less processing yield hazards 0 reduced electric fields

  • reduced parasitic capacitances 0 reduced short-channel effects

  • sharper subthreshold slope

  • shorter and easier CMOS processing

Keywords

Threshold Voltage Supply Voltage Gate Voltage Gate Oxide Thickness Bulk CMOS 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    T. Stanley, Proceedings of the IEEE Intemational SOI Conference, p. 166, 1992Google Scholar
  2. 2.
    T. Stanley, in “Silicon-on-Insulator Technology and devices”, Ed. by. S. Cristoloveanu, The Electrochemical Society, Proceedings Vol. 94–11, p. 441, 1994Google Scholar
  3. 3.
    T.D. Stanley, Proceedings of the Second Intemational Symposium on “Semiconductor Wafer Bonding: Science, Technology, and Applications”, Ed. by M.A. Schmidt, C.E. Hunt, T. Abe, and H. Baumgart, The Electrochemical Society, Proceedings Vol. 93–29, p. 303, 1993Google Scholar
  4. 4.
    Y. Kado, H. Inokawa, Y. Okazaki, T. Tsuchiya, Y. Kawai, M. Sato, Y. Sakakibara, S. Nakayama, H. Yamada, M. Kitamura, S. Nakashima, K. Nishimura, S. Date, M. Ino, K. Takeya, and T. Sakai, Technical Digest of IEDM, p. 635, 1995Google Scholar
  5. 5.
    B.Y. Hwang, M. Racanelli, M. Huang, J. Foerstner, S. Wilson, T. Wetteroth, S. Wald, J. Rugg, and S. Cheng, Extended Abstracts of the International Conference on Solid-State Devices and Materials, Yokohama, p. 268, 1994Google Scholar
  6. 6.
    G.G. Shahidi, T.H. Ning, R. Dennard, and B. Davari, Extended Abstracts of the International Conference on Solid-State Devices and Materials, Yokohama, p. 265, 1994Google Scholar
  7. 7.
    M. Guerra, A. Wittkower, J. Stahman, and J. Schrankler, Semiconductor international, May 1990Google Scholar
  8. 8.
    J.P. Colinge, Technical Digest of IEDM, p. 817, 1989Google Scholar
  9. 9.
    T.W. Houston, H. Lu, P. Mei, T.G.W. Blake, L.R. Hite, R. Sundaresan, M. Matloubian, W.E. Bailey, J. Liu, A. Peterson, and G. Pollack, Proceedings IEEE SOS/SOI Technology Conference, p. 137, 1989Google Scholar
  10. 10.
    H. Gotou, A. Sekiyama, T. Seki, S. Nagai, N. Suzuki, M. Hayasaka, Y. Matsukawa, M. Miyazima, Y. Kobayashi, S. Enomoto, and. K. Imaoka, Technical Digest of IEDM, p. 912, 1989Google Scholar
  11. 11.
    A.J. Auberton-Hervé, Proceedings IEEE SOS/SOI Technology Conference, p. 149, 1990Google Scholar
  12. 12.
    K. Verhaege, G. Groeseneken, J.P. Colinge, and H.E. Maes, IEEE Electron Device Letters, Vol. 14, No. 7, p. 326, 1993CrossRefGoogle Scholar
  13. 13.
    J.S.T. Huang, Proceedings of the IEEE International SOI Conference, p. 122, 1993Google Scholar
  14. 14.
    J.S.T. Huang, H.J. Chen, and S.J. Kueng, IEEE Transactions on Electron Devices, Vol. 39, p. 1170, 1992CrossRefGoogle Scholar
  15. 15.
    H.K. Yu, J.S. Lyu, S.W. Kang, and C.K. Kim, IEEE Transactions on Electron Devices, Vol. 41, No. 5, p. 726, 1994CrossRefGoogle Scholar
  16. 16.
    N. Kistler and J. Woo, IEEE Transactions on Electron Devices, Vol. 41, No. 7, p. 1217, 1994CrossRefGoogle Scholar
  17. 17.
    J.C. Smith, M. Lien, and S. Veeraraghavan, Proceedings of the IEEE Intemational SOI Conference, p. 170, 1996Google Scholar
  18. 18.
    M. Chan, J.C. King, P.K. Ko, and C. Hu, IEEE Electron Device Letters, Vol. 16, No. 1, p. 11, 1995CrossRefGoogle Scholar
  19. 19.
    A.O. Adan, T. Naka, S. Kaneko, D. Urabe, K. Higashi, and A. Kasigawa, Proceedings IEEE International SOI Conference, p. 116, 1996Google Scholar
  20. 20.
    K. Verhaege, G. Groeseneken, J.P. Colinge, and H.E. Maes, Microelectronics and Reliability, Special Issue ‘Reliability Physics of Advanced Electron Devices’, Vol. 35, No. 256, Issue 3, p. 555, 1994Google Scholar
  21. 21.
    M. Chan, S.S. Yuen, Z.J. Ma, Y. Hui, P.K. Ko, and C. Hu, IEEE Transactions on Electron Devices, Vol. 42, No. 10, p. 1816, 1995CrossRefGoogle Scholar
  22. 22.
    P. Francis, A. Terao, B. Gentinne, D. Flandre, and J.P. Colinge, Technical Digest of IEDM, p. 353, 1992Google Scholar
  23. 23.
    A.J. Auberton-Hervé, J.P. Colinge and D. Flandre, Japanese Solid State Technology, pp. 12–17, Dec. 1993 (In Japanese)Google Scholar
  24. 24.
    W.A. Krull and J.C. Lee, Proceedings IEEE SOS/SOI Technology Workshop, p. 69, 1988Google Scholar
  25. 25.
    H. Gotou, A. Sekiyama, T. Seki, S. Nagai, N. Suzuki, M. Hayasaka, Y. Matsukawa, M. Miyazima, Y. Kobayashi, S. Enomoto, and K. Imaoka, Technical digest of IEDM, p. 912, 1989Google Scholar
  26. 26.
    P. Francis, A. Terao, B. Gentinne, D. Flandre, and J.P. Colinge, Technical Digest of IEDM, p. 353, 1992Google Scholar
  27. 27.
    A. Viviani, D. Flandre, and P. Jespers, Proceedings of the IEEE SOI Conference, p. 110, 1996Google Scholar
  28. 28.
    J. Weyers and H. Vogt, Technical Digest of IEDM, p. 225, 1992Google Scholar
  29. 29.
    A. Nakagawa, N. Yasuhara, I. Omura, Y. Yamaguchi, T. Ogura, and T. Matsudai, Technical Digest of IEDM, p. 229, 1992Google Scholar
  30. 30.
    D.B. King, “A summary of high-temperature electronics needs, research and development in the United States”, presented at the EUROFORM seminar, May 1992, Darmstadt, GermanyGoogle Scholar
  31. 31.
    B. Gentinne, J.P. Eggermont, and J.P. Colinge, Electronics Letters, vol. 31–24, p. 2092, 1995CrossRefGoogle Scholar
  32. 32.
    C.C. Enz, in Low-power HF microelectronics: a unified approach edited by G.A.S. Machado, IEE circuits and systems series 8, the Institution of Electrical Engineers, p. 247, 1996Google Scholar
  33. 33.
    J.P. Colinge, in Low-power HF microelectronics: a unified approach edited by G.A.S. Machado, IEE circuits and systems series 8, the Institution of Electrical Engineers, p. 139, 1996Google Scholar
  34. 34.
    J.P. Colinge, Technical Digest of IEDM, p. 817, 1989Google Scholar
  35. 35.
    D. Flanche, C. Jacquemin and J.P. Colinge, Proceedings of the IEEE International SOI Conference, 1992, pp. 164–165Google Scholar
  36. 36.
    J.P. Colinge, in Low-power HF microelectronics: a unified approach edited by G.A.S. Machado, IEE circuits and systems series 8, the Institution of Electrical Engineers, p. 139, 1996Google Scholar
  37. 37.
    A.J. Auberton-Hervé, Proc. Vol. 90–6, The Electrochemical Society, p. 455, 1990Google Scholar
  38. 38.
    E.D. Nowak, L. Ding, Y.T. Loh and C. Hu, Proceedings of the IEEE International Conference, p. 41, 1994Google Scholar
  39. G.G. Shahidi, T.H. Ning, R.H. Dennard, and B. Davari, Extended abstracts of the International Conference on Solid-State Devices and Materials, Yokohama, Japan, p. 265, 1994Google Scholar
  40. B.Y. Hwang, M. Racanelli, M. Huang, J. Foerstner, S. Wilson, T. Wetteroth, S. Wald, J. Rugg, and S. Cheng, Extended abstracts of the International Conference on Solid-State Devices and Materials, Yokohama, Japan, p. 268, 1994Google Scholar
  41. 41.
    M. Fujishima, K. Asada, Y. Omura, and K. Izumi, IEEE Journal Solid-State Circuits, Vol. 28, No. 4, p. 510, 1993CrossRefGoogle Scholar
  42. 42.
    Y. Kado, M. Suzuki, K. Koike, Y. Omuran, and K. Izumi, IEEE Journal Solid-State Circuits, Vol. 28, No. 4, p. 510, 1993CrossRefGoogle Scholar
  43. 43.
    Y. Kado, T. Ohno, M. Harada, K. Deguchi, and T. Tsuchiya, Techn. Digest of IEDM, p. 243, 1993Google Scholar
  44. 44.
    GG. Shahidi, T.H. Ning, T.I. Chappell, J.H. Comfort, B.A. Chappell, R. Franch, C.J. Anderson, P.W. Cook, S.E. Schuster, M.G. Rosenfield, M.R. Polcari, R.H. Dennard, and B. Davari, Techn. Digest of IEDM, p. 813, 1993Google Scholar
  45. 45.
    T. Eimori, T. Oashi, H. Kimura, Y. Yamaguchi, T. Iwamatsu, T. Tsuruda, K. Suma, H. Hidaka, Y. Inoue, S. Satoh, and H. Miyoshi, Techn. Digest of IEDM, p. 45, 1993Google Scholar
  46. 46.
    W.M. Huang, K. Papworth, M. Racanelli, J.P. John, J. Foerstner, H.C. Shin, H. Park, B.Y. Hwang, T. Wetteroth, S. Hong, H. Shin, S. Wilson, and S. Cheng, Techn. Digest of IEDM, p. 95, 1995Google Scholar
  47. 47.
    T. Douseki, S. Shigematsu, Y. Tanabe, M. Harada, H. Inokawa, and T. Tsuchiya, Digest of Technical Papers, IEEE International Solid-State Circuits Conference, p. 84, 1996Google Scholar
  48. 48.
    M. Ino, H. Sawada, K. Nishimura, M. Urano, H. Suto, S. Date, T. Ishiara, T. Takeda, Y. Kado, H. Inokawa, T. Tsuchiya, Y. Sakakibara, Y. Arita, K. Izumi, K. Takeya, and T. Sakai, Digest of Technical Papers, IEEE International Solid-State Circuits Conference, p. 86, 1996Google Scholar
  49. 49.
    T. Fuse, Y. Oowaki, M. Terauchi, S. Watanabe, M. Yoshimi, K. Ohuchi, and J. Matsunaga, Digest of Technical Papers, IEEE International Solid-State Circuits Conference, p. 88, 1996Google Scholar
  50. 50.
    A.O. Adan, T. Naka, S. Kaneko, D. Urabe, K. Higashi, and A. Kasigawa, Proceedings IEEE International SOI Conference, p. 116, 1996Google Scholar
  51. 51.
    T. Fuse, Y. Oowaki, Y. Yamada, M. Kamoshida, M. Ohta, T. Shino, S. Kawanaka, M. Terauchi, T. Yoshida, G. Matsubara, S. Oshioka, S. Watanabe, M. Yoshimi, K Ohuchi, and S. Manabe, Digest of Technical papers, International Solid-State Circuits Conference, p. 286, 1997Google Scholar
  52. 52.
    Y. Ohtomo, S. Yasuda, M. Nogawa, J. Inoue, K. Yamakoshi, H. Sawada, M. Ino, S. Hino, Y. Sato, Y. Takei, T. Watanabe, and K. Takeya, Digest of Technical papers, International Solid-State Circuits Conference, p. 154, 1997Google Scholar
  53. 53.
    F. Silveira, D. Flandre, and P.G.A. Jespers, IEEE Journal of Solid-State Circuits, Vol. 31, No. 9, p. 1314, 1996CrossRefGoogle Scholar
  54. 54.
    E.A. Vittoz, Proceedings of 23rd ESSDERC, Ed. by J. Borel, P. Gentil, J.P. Noblanc, A. Nouhaillat, and M. Verdone, Editions Frontières, p. 927, 1993Google Scholar
  55. 55.
    T. Fuse, Y. Oowaki, Y. Yamada, M. Kamoshida, M. Ohta, T. Shino, S. Kawanaka, M. Terauchi, T. Yoshida, G. Matsubara, S. Oshioka, S. Watanabe, M. Yoshimi, K Ohuchi, and S. Manabe, Digest of Technical papers, International Solid-State Circuits Conference, p. 286, 1997Google Scholar
  56. 56.
    D. Flandre, B. Gentinne, J.P. Eggermont, and P.G.A. Jespers, Proceedings of the IEEE International SOI Conference, p. 99, 1994Google Scholar
  57. 57.
    Y. Omura and K. Izumi, IEEE Electron Device Letters, Vol. EDL-12, p. 655, 1991Google Scholar
  58. 58.
    B. Gentinne, J.P. Eggermont and J.P. Colinge, Electronics Letters, vol. 31–24, p. 2092, 1995CrossRefGoogle Scholar
  59. 59.
    J.P. Colinge, J.P. Eggermont, D. Flandre, P. Francis and P.G.A. Jespers, Technical Digest of ISSCC, p. 194, 1995Google Scholar
  60. 60.
    J.P. Eggermont, D. Flandre, R. Gillon and J.P. Colinge, Proceedings of the Intemational SOI Conference, p. 127, 1995Google Scholar
  61. 61.
    J.P. Eggermont, D. De Ceuster, D. Flandre, B. Gentinne, P.G.A. Jespers and J.P. Colinge, IEEE Journal of Solid-State Circuits, Vol. 31, No. 2, 1996Google Scholar
  62. 62.
    I. Rahim, I. Lim, J. Foerstner, and B.Y. Hwang, Proceedings of the IEEE Intemational SOI Conference, p. 170, 1992Google Scholar
  63. 63.
    K. Joardar, Solid-State Electronics, Vol. 39, No. 4, p. 511, 1996CrossRefGoogle Scholar
  64. 64.
    I. Rahim, B.Y. Hwang, and J. Foerstner, Proceedings of the IEEE International SOI Conference, p. 170, 1992Google Scholar
  65. 65.
    A. Viviani, J.P. Raskin, D. Flandre, J.P. Colinge, and D. Vanoenacker, Technical Digest of IEDM, p. 713, 1995Google Scholar
  66. 66.
    D.M. Fletwood, F.V. Thome, S.S. Tsao, P.V. Dressendorfer, V.J. Dandini, and J.R. Schwank, IEEE Trans. Nucl. Sci, Vol. 35, p. 1099, 1988CrossRefGoogle Scholar
  67. 67.
    G.E.Davis, L.R. Hite, T.G.W. Blake, C.E. Chen, H.W. Lam, R. DeMoyer, IEEE Trans. on Nuclear Science, Vol. 32, p. 4432, 1985Google Scholar
  68. 68.
    W.F. Kraus and J.C. Lee, Proceedings SOS/SOI Technology Conference, p. 173, 1989Google Scholar
  69. 69.
    J.L. Leray, E. Dupont-Nivet, M Raffaelli, Y.M. Coïc, O. Musseau, J.F. Péré, P. Lalande, J. Brédy, A.J. Auberton-Hervé, M. Bruel, and B. Giffard, Annales de Physique, Colloque n°2, Vol. 14, suppl. to n°6, p. 565, 1989Google Scholar
  70. 70.
    J.L. Leray, E. Dupont-Nivet, J.F. Péré, Y.M. Coïc, M. Rafaelli, A.J. Auberton-Hervé, M. Bruel, B. Giffard and J. M.rgail, IEEE Trans. Nucl. Sci., Vol. 37, no. 6, p. 2013, 1990CrossRefGoogle Scholar
  71. 71.
    G.T. Goeloe, G.A. Hanidu, and K.H. Lee, Tech. Prog. of IEEE Nuclear and Space Radiation Effects Conference (NSREC), paper PG-5, p. 35, 1990Google Scholar
  72. 72.
    M.A. Guerra, Proc. of the 4th International Symposium on Silicon-on-Insulator Technology and Devices, Ed. by D. Schmidt, the Electrochemical Society, Vol. 90–6, p. 21, 1990Google Scholar
  73. 73.
    W.F. Kraus, J.C. Lee, W.H. Newman, and J.E. Clark, Tech. Prog. of IEEE Nuclear and Space Radiation Effects Conference (NSREC), paper PG-6, p. 35, 1990Google Scholar
  74. 74.
    L.J. Palkuti, J.J. LePage, IEEE Transactions on Nuclear Science, Vol. 29, p. 1832, 1982CrossRefGoogle Scholar
  75. 75.
    J.L. Leray, E. Dupont-Nivet, J.F. Péré, Y.M. Coïc, M. Rafaelli, A.J. Auberton-Hervé, M. Bruel, B. Giffard and J. Margail, IEEE Trans. Nucl. Sci., Vol. 37, no. 6, p. 2013, 1990CrossRefGoogle Scholar
  76. 76.
    J.L. Leray, E. Dupont-Nivet, J.F. Péré, O. Musseau, P. Lalande, and A. Umbert, Proceedings SOS/SOI Technology Conference, p. 114, 1989Google Scholar
  77. 77.
    Delpierre, R. Potheau, R. Truche, J.P. Blanc, E. Delevoye, J. Gautier, J.L. Pelloie, J. de Pontcharra, O. Flament, J.L. Leray, J.L. Martin, J. Montaron, and O. Musseau, IEEE Transactions on Nuclear Science, Vol. 40, No. 6, p. 1555, 1993CrossRefGoogle Scholar
  78. 78.
    M. Dentan, E. Delagnes, N. Fourches, M. Rouger, M.C. Habrard, L. Blanquart, P.Google Scholar
  79. 79.
    O. Flament, J.L. Leray, and O. Musseau, in Low-power HF microelectronics: a unified approach edited by G.A.S. Machado, IEE circuits and systems series 8, the Institution of Electrical Engineers, p. 185, 1996Google Scholar
  80. 80.
    J. Weyers, H. Vogt, M. Berger, W. Mach, B. Mütterlein, M. Raab, F. Richter, and F. Vogt, Proceedings of the 22nd ESSDERC, Microelectronic Engineering, Vol. 19, p 733, 1992CrossRefGoogle Scholar
  81. 81.
    C. Harendt, U. Apel, T. Ifström, H.G. Graf, and B. Höfflinger, Proceedings of the Second International Symposium on “Semiconductor Wafer Bonding: Science, Technology, and Applications”, Ed. by M.A. Schmidt, C.E. Hunt, T. Abe, and H. Baumgart, The Electrochemical Society, Proceedings Vol. 93–29, p. 129, 1993Google Scholar
  82. 82.
    H. Pein, E. Arnold, H. Baumgart, R. Egloff, T. Letavic, S. Merchant, and S. Mukherjee, Proceedings of the IEEE International SOI Conference, p. 146, 1992Google Scholar
  83. 83.
    F. Vogt, B. Mütterlein, and H. Vogt, Proceedings of the fifth International Symposium on Silicon-on-Insulator Technology and devices, Ed. by: K. Izumi, S. Cristoloveanu, P.L.F. Hemment, and G.W. Cullen, The Electrochemical Society Proceedings volume 92–13, p. 77, 1992Google Scholar
  84. 84.
    W. Wondrak, E. Stein, and R. Held, in “Semiconductor Wafer Bonding: Science, Technology, and Applications”, Ed. by U. Gösele, T. Abe, J. Haisma, and M.A.A Schmidt, Proceedings of the Electrochemical Society, Vol. 92–7, p. 427, 1992Google Scholar
  85. 85.
    W.P. Maszara, D. Boyko, A. Caviglia, G. Goetz, J.B. McKitterick, and J. O’Connor, Proceedings of the IEEE International SOI Conference, p. 131, 1995Google Scholar
  86. 86.
    M. Radecker, H.L. Fiedler, F.P. Vogt, and H. Vogt, Digest of Technical papers, International Solid-State Circuits Conference, p. 378, 1997Google Scholar
  87. 87.
    E. Arnold, H. Pein, and S.P. Herko, Technical Digest of IEDM, p. 813, 1884Google Scholar
  88. 88.
    J. Weyers, H. Vogt, M. Berger, W. Mach, B. Mütterlein, M. Raab, F. Richter, and F. Vogt, Proceedings of the 22nd ESSDERC, Microelectronic Engineering, Vol. 19, p 733, 1992CrossRefGoogle Scholar
  89. 89.
    K. Izumi, Y. Omura, M. Ishikawa, and E. Sano, Techn. Digest of the Symposium on VLSI Technology, p. 10, 1982Google Scholar
  90. 90.
    W.A. Krull and J.C. Lee, Proc. IEEE SOS/SOI Technology Workshop, p. 69, 1988Google Scholar
  91. 91.
    T. W. Houston, H. Lu, P. Mei, T.G.W. Blake, L.R. Hite, R. Sundaresan, M. Matloubian, W.E. Bailey, J. Liu, A. Peterson, and G. Pollack, Proc. IEEE SOS/SOI Technology Workshop, p. 137, 1989Google Scholar
  92. 92.
    A.J. Auberton-Hervé, B. Giffard, and M. Bruel, Proceedings IEEE SOS/SOI Technology Workshop, p. 169, 1989Google Scholar
  93. 93.
    W.E. Bayley, H. Lu, T.G.W. Blake, L.R. Hite, P. Mei, D. Hurta, T.W. Houston, G.P. Pollack, Proceedings of the IEEE International SOI Conference, p. 134, 1991Google Scholar
  94. 94.
    L.K. Wang, J. Seliskar, T. Bucelot, A. Edenfeld, N. Haddad, Techn. Digest of IEEE Internat. Electron Device Meeting (IEDM), p. 679, 1991Google Scholar
  95. 95.
    H. Lu, E. Yee, L. Hite, T. Houston, Y.D. Sheu, R. Rajgopal, C.C. CHen, J.M. Hwang, G. Pollack, Proceedings of IEEE International SOI Conference, p. 182, 1993Google Scholar
  96. 96.
    G.G. Shahidi, T.H. Ning, T.I. Chappell, J.H. Comfort, B.A. Chappell, R. Franch, C.J. Anderson, P.W. Cook, S.E. Schuster, M.G. Rosenfield, M.R. Polcari, R.H. Dennard, and B. Davari, Techn. Digest of IEDM, p. 813, 1993Google Scholar
  97. 97.
    T. Eimori, T. Oashi, H. Kimura, Y. Yamaguchi, T. Iwamatsu, T. Tsuruda, K. Suma, H. Hidaka, Y. Inoue, T. Nishimura, S. Satoh, and M. Miyoshi, Technical Digest of IEDM, p. 45, 1993Google Scholar
  98. 98.
    H.-S. Kim, S.-B. Lee, D.-U. Choi, J.-H. Shim, K.-C. Lee, K.-P. Lee, K.-N. Kim, and J.-W. Park, Digest of Technical Papers of the Symposium on VLSI Technology, p. 143, 1995Google Scholar
  99. 99.
    T. Oashi, T. Eimori, F. Morishita, T. Iwamatsu, Y. Yamaguchi, F. Okuda, K. Shimomura, H. Shimano, S. Sakashita, K. Arimoto, Y. Inoue, S. Komori, M. Inuishi, T. Nishimura, and H. Miyoshi, Technical Digest of IEDM, p. 609, 1996Google Scholar
  100. 100.
    K. Shimomura, H. Shimano, F. Okuda, N. Sakashita, T. Oashi, Y. Yamaguchi, T. Eimori, M. Inuishi, K. Arimoto, S. Maegawa, Y. Inoue, T. Nishimura, S. Komori, K. Kyuma, A. Yasuoka, and H. Abe, Digest of Technical papers, International Solid-State Circuits Conference, p. 68, 1997Google Scholar
  101. 101.
    http://www.hiten.com/hiten/news/Hwell.QML.html (January 1997)Google Scholar
  102. 102.
    C.S. Kim ( Semiconductors Asia/Pacific ), Dataquest - Korea, May 1997Google Scholar
  103. 103.
    Y. Hu, C. Teng, T.W. Houston, K. Joyner, and T.J. Aton, Digest of Technical papers, Symposium on VLSI Technology, p. 128, 1996Google Scholar
  104. 104.
    A. Chatterjee, J. Liu, S. Aur, P.K. Mozumder, M. Rodder, and I.C. Chen, Technical Digest of IEDM, p. 87, 1994Google Scholar
  105. 105.
    Y. Hu, C. Teng, T.W. Houston, K. Joyner, and T.J. Aton, Digest of Technical papers, Symposium on VLSI Technology, p. 128, 1996Google Scholar

Copyright information

© Springer Science+Business Media New York 1997

Authors and Affiliations

  • Jean-Pierre Colinge
    • 1
  1. 1.Université catholique de LouvainBelgium

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