Exchange Energy Interactions in Quantum Well Heterostructures

  • A. H. Guerrero
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 113)

Abstract

The influence of the exchange energy interaction on electronic subbands in a square well potential is investigated using a Kohn-Sham density functional approach. We concentrate on a layered AlGaAs/GaAs/AlGaAs system, the properties of which are observed as a function of well width, at absolute zero. Previous studies on exchange energy effects in quasi-2D (two dimensional) electron systems often use a local density functional formalism (Stern and Sarma, 1984) or, alternatively, the Slater approximation (Vx(r)elater≈ n(r)1/3) (Kaminskii, 1989). We, on the other hand, apply a recently proposed effective exchange potential Vx(z) (Krieger and others, 1990: see equation 3). The properties of Vx(z) make it interesting for future applications to heterojunction device simulations.

Keywords

GaAs Layer Slater Approximation Subband Energy Single Electron Tunneling Electronic Subbands 
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References

  1. Chow, P. C. (1972), American Journal of Physics, 40, 730.CrossRefGoogle Scholar
  2. Kaminskii V.E. (1989), Soviet Physics of Semiconductors, 23(4), 414.Google Scholar
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  6. Stern, F. and Sarma, S. D.(1984). Physical Review B, 30,2 , 840.CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • A. H. Guerrero
    • 1
  1. 1.US Army Electronic Devices and Technology Laboratory (SLCET-EA)Ft. MonmouthUSA

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