Quantum-Well Infrared Photodetectors: Monte Carlo Simulations of Transport
This paper describes some Monte Carlo simulations of electron transport in quantum-well infrared photodetectors designed to operate in the 10μm wavelength range. These GaAs/AlGaAs superlattice photodetectors absorb radiation between a bound state in the wells and the continuum of states above the wells. We have studied the collection efficiency of the photoexcited electrons at 70 K as a function of bias across the device. It is concluded that the quantum mechanical well capture transltion rate through interaction with LO phonons, between the extended states in the continuum and the bound state, has to be considered for agreement with the experimental results.
KeywordsMonte Carlo Simulation Photoexcited Electron Polar Optical Phonon Measured Responsivity Optical Power Input
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- S.V. Kozyrev and A. Ya. Shik, Sov. Phys. Semicond. 19, 1024 (1986)Google Scholar