J-V Characteristics of Graded AlxGa1-xAs Heterojunction Barriers Using the Self Consistent Ensemble Monte Carlo Method

  • R. Kamoua
  • J. R. East
  • G. I. Haddad
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 113)

Abstract

The properties of graded AlxGa1-xAs heterojunction barriers are investigated using the self consistent ensemble Monte Carlo method. The effect of barrier height and doping is determined by considering barrier heights of 100 meV and 265 meV, and doping levels in the barrier of 1 x 1015 cm -3 and 1 x 1017 cm -3. The lower doped barrier is shown to result in a smaller current both in the forward and reverse bias regions due to space charge effects. The barrier doping provides a mechanism by which the ideality factor of the barrier diode can be changed whereas the barrier height provides a mechanism by which the saturation current can be controlled effectively.

Keywords

Barrier Height Ideality Factor Barrier Region Space Charge Effect Barrier Thickness 
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References

  1. [1]
    Y. Cho. R. Sakamoto, and M. Inoue, “Real Space Hot Electron Distributions and Transfer Effects in Heterostructures,” Solid-State Electronics, Vol. 31, No. 3/4, 1988, pp 325–328CrossRefGoogle Scholar
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    G. C. Osbourn and D. L. Smith, “Carrier Transport Coefficients across GaAs-GaAlAs (100) Interfaces,” J. Vac. Sci. Technol., 16(5), Sept/Oct. 1979Google Scholar
  3. [3]
    E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts (Oxford University Press, New York, 1988), p. 99.Google Scholar

Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • R. Kamoua
    • 1
  • J. R. East
    • 1
  • G. I. Haddad
    • 1
  1. 1.Center for High Frequency Microelectronics Solid State Electronics Laboratory, Department of Electrical Engineering and Computer ScienceThe University of MichiganAnn ArborUSA

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