Minority Electron Transport Across Submicron Layers of GaAs and InP
The dynamics of transient transport of minority electrons injected into p+ doped submicron layers of GaAs and InP has been investigated using ensemble Monte Carlo method. It is found that the transit times of electrons across these layers are longer or shorter depending on the electric field strength and the width of the layers. For example the transit times across a 0.4 μm p + doped GaAs layers increases from 1.0 to 2.0 ps at 10 kV/cm electric field, while it decreases from about 3.0 to 2.0 ps at 50 kV/cm when the inelastic scattering of minority electrons by the hole plasma is taken into account. The calculations were also performed for InP and the results show the same trend.
KeywordsTransit Time Inelastic Scattering Computational Electronics Electron Drift Velocity Uniform Electric Field
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