The SOI MOSFET Operating in a Harsh Environment

  • Jean-Pierre Colinge
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 132)

Abstract

SOI MOSFETs present several properties which allow them to operate in harsh environments where bulk devices would typically fail from operating satisfactorily. These interesting properties of the SOI MOSFETs are due to the small volume of silicon in which the devices are made, to the small area of the source-body and drain-body junctions, and to the presence of a back gate. In this Chapter, we will describe the behavior of the SOI MOSFET operating in three cases of extreme environments: the exposure to radiations, to high temperatures and to low (cryogenic) temperatures.

Keywords

Threshold Voltage Linear Energy Transfer Gate Oxide Silicon Film Interface Trap 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • Jean-Pierre Colinge
    • 1
  1. 1.IMECBelgium

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