Other SOI Devices

  • Jean-Pierre Colinge
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 132)

Abstract

Although CMOS remains the most obvious field of application for SOI, the ease of processing SOI substrates, the full dielectric isolation of the devices and the possibility of using a back gate have sparked a large research activity in the field of novel SOI devices. Indeed, different novel bipolar and MOS structures have been proposed such as gated diode structures, lateral bipolar and bipolar-MOS devices, vertical bipolar transistors with back gate-induced collector, high-voltage lateral devices of various kinds and double gate MOS devices. This Chapter will review these devices, qualitatively explain their physics and explore their possible fields of application. It will also describe some devices (other than the MOSFET) which have been adapted from bulk to SOI technology.

Keywords

Gate Voltage Gate Oxide Silicon Film Bipolar Transistor Gate Bias 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • Jean-Pierre Colinge
    • 1
  1. 1.IMECBelgium

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