The idea of realizing semiconductor devices in a thin silicon film which is mechanically supported by an insulating substrate has been around for several decades. The first description of the insulated-gate field-effect transistor (IGFET), which later on evolved into the modern silicon metal-oxide-semiconductor field-effect transistor (MOSFET), is found in the historical patent of Lilienfield dating from 1926 [1.1]. This patent depicts a three-terminal device where what is nowadays called the source-to-drain current is controlled by field effect from a gate which is dielectrically insulated from the rest of the device. The piece of semiconductor which constitutes the active part of the device is a thin semiconductor film deposited on an insulator. In a sense, it can thus be said that the first MOSFET was a Semiconductor-on-Insulator (SOI) device. The technology of that time was unfortunately unable to produce a successfully operating Lilienfield device. IGFET technology was then forgotten for a while, completely overshadowed by the enormous success of the bipolar transistor, discovered in 1947 [1.2].
KeywordsParasitic Capacitance Bipolar Transistor Thin Silicon Film CMOS Inverter Thin Semiconductor Film
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- 1.1.J.E. Lilienfield, U.S. patents 1,745,175 (filed 1926, issued 1930), 1,877,140 (filed 1928, issued 1932), and 1,900,018 (filed 1928, issued 1933 )Google Scholar
- 1.4.R.R. Troutman, Latchup in CMOS Technology Kluwer Academic Publishers, 1986Google Scholar
- 1.5.T.W. MacElwee, Ext. Abstracts of the Electrochem. Society Spring Meeting, Los Angeles, p. 280, 1989Google Scholar