Advertisement

Investigation of the Time Constants of an Indium Arsenide Laser

  • V. B. Buber
  • V. V. Nikitin
  • K. P. Fedoseev
Chapter

Abstract

An investigation was made of the time constants of an InAs p-n junction laser. The carrier recombination lifetime was measured in the active region of the diode. The dependence of the delay time of a light pulse, relative to an injection current pulse, was determined. Near the laser threshold, the delay time was ~33 nsec, but when the threshold current was exceeded fivefold the delay decreased to ~6 nsec.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literature Cited

  1. 1.
    B. S. Goldstein and R. M. Weigand, Proc. IEEE, 53:195 (1965).CrossRefGoogle Scholar
  2. 2.
    K. Konnerth and C. Lanza, Appl. Phys. Letters, 4:120 (1964).ADSCrossRefGoogle Scholar
  3. 3.
    Yu. A. Drozhbin, V. V. Nikitin, A. S. Semenov, B. M. Stepanov, A. M. Tolmachev, and V. A. Yakovlev, Izmeritel’naya Tekhnika, No. 11, p. 92 (1966).Google Scholar
  4. 4.
    N. G. Basov, Yu. A. Drozhbin, Yu. P. Zakharov, V. V. Nikitin, A. S. Semenov, B. M. Stepanov, A. M. Tolmachev, and V. A. Yakovlev, Fiz. Tverd. Tela, 8:2816 (1966).Google Scholar
  5. 5.
    W. P. Dumke, Phys. Rev., 132:1998 (1963).ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • V. B. Buber
    • 1
  • V. V. Nikitin
    • 1
  • K. P. Fedoseev
    • 1
  1. 1.P. N. Lebedev Physics InstituteAcademy of Sciences of the USSRMoscowRussia

Personalised recommendations