Investigation of the Time Constants of an Indium Arsenide Laser
An investigation was made of the time constants of an InAs p-n junction laser. The carrier recombination lifetime was measured in the active region of the diode. The dependence of the delay time of a light pulse, relative to an injection current pulse, was determined. Near the laser threshold, the delay time was ~33 nsec, but when the threshold current was exceeded fivefold the delay decreased to ~6 nsec.
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