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New Optoelectronic Devices Made of Zinc-Compensated Silicon

  • B. V. Kornilov

Abstract

A brief description is given of the principal physical properties of p- and n-type silicon compensated with zinc. Specific suggestions are made about the possible applications of compensated silicon in new optoelectronic and electronic devices. It is shown that this material can be used in photoresistors, light amplifiers, radiation converters, memory elements, photodiodes, and other devices. The principal parameters of these devices are given. It is concluded that zinc-compensated silicon is a promising optoelectronic material.

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Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • B. V. Kornilov

There are no affiliations available

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