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Overload on a Thyristor Caused by a Single Large-Amplitude Current Pulse

  • É. F. Burtsev
  • I. V. Grekhov
  • N. N. Kryukova
  • É. V. Palko
  • A. I. Uvarov
Chapter

Abstract

Overloading a thyristor with a single sinusoidal current pulse is considered. The current-voltage characteristic of the thyristor is approximated by the expression V = V0 + IR. Heat conduction equations are solved making some simplifying assumptions. The temperature rise in a silicon plate is determined during and after the passage of a current pulse through the systems W-Si-W, Cu-Si-Cu, and W-Si-Cu. In particular, the temperature rise at the Si-W boundary at the end of a 10 msec sinusoidal current pulse is given by the following expression, which applies to the W-Si-W system (silicon plate 0.4 mm thick and tungsten heat sink ≥1 mm thick):
$$ {\text{T/P }}_{\text{m}} {\text{ = 0}}{\text{.01025 + 0}}{\text{.0034V}}_{\text{0}} {\text{/V }}_{\text{m}} $$
where V m = V0 + ImR and P m = ImVm are the peak values of the voltage and power during this pulse. The temperature rise in the Cu-Si-Cu system is approximately half that given above, other conditions being equal. The temperature in the central plane of the silicon plate during the passage of a cur — rent pulse differs considerably from the temperature at the boundaries of this plate, but at the end of the pulse (for a plate 0.4 mm thick and a pulse 10 msec long) the temperature throughout the plate is practically the same. An experimental determination was made of the temperature rise in a silicon plate at the end of a pulse. The temperature dependence of the forward voltage drop at low current densities (~30 mA/cm2) is used as the temperature-sensitive parameter. The experimental results are in satisfactory agreement with the theoretical formulas.

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Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • É. F. Burtsev
    • 1
  • I. V. Grekhov
    • 1
  • N. N. Kryukova
    • 1
  • É. V. Palko
    • 1
  • A. I. Uvarov
    • 1
  1. 1.A. F. Ioffe Physicotechnical InstituteAcademy of Sciences of the USSRLeningradRussia

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