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Current-Voltage Characteristics of p-n-p-n Structures Governed By Recombination, Generation, and Avalanche Multiplication Processes in p-n Junctions

  • V. A. Kuz’min
  • Yu. A. Parmenov
Chapter

Abstract

The principal parameters of the current-voltage characteristics of silicon planar thyristors are calculated taking into account the recombination, generation, and avalanche multiplication in p-n junctions. Analytic expressions are obtained for the determination of the turn-off current, critical gate current, and turn-off gain of an asymmetrical silicon planar thyristor. The dependence of the turn-off current on the gate current and the dependence of the turn-off gain on the anode current are calculated. Allowance is made for the avalanche multiplication of carriers in the central p-n junction and analytic expressions are derived for the turn-on current and the breakover voltage. It is shown that the breakover voltage of planar thyristors designed for low-voltage operation is close to the breakdown voltage of the central p-n junction, which is due to the low value of the leakage current of this junction.

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Literature Cited

  1. 1.
    C. T. Sah, R. N. Noyce, and W. Shockley, Proc. IRE, 45:1228 (1957).CrossRefGoogle Scholar
  2. 2.
    D. R. Muss and C. Goldberg, IEEE Trans. Electron Dev., ED-10:113 (1963).CrossRefGoogle Scholar
  3. 3.
    A. A. Lebedev, A. I. Uvarov, and V. E. Chelnokov, Physics of p—n Junctions, Zinatne, Riga (1966);Google Scholar
  4. 3a.
    A. A. Lebedev, Dissertation for Candidate’s Degree, Physicotechnical Institute, Academy of Sciences of the USSR, Leningrad (1967).Google Scholar
  5. 4.
    Yu. S. Ryabinkin, Radiotekhn. i Élektron., 10:2205 (1965);Google Scholar
  6. 4a.
    Yu. S. Ryabinkin, Radiotekhn. i Élektron., 11:1910 (1966).Google Scholar
  7. 5.
    S. M. Sze and G. Gibbons, Solid State Electronics, 9:831 (1966).ADSCrossRefGoogle Scholar
  8. 6.
    W. M. Bullis, Solid State Electronics, 9:143 (1966).ADSCrossRefGoogle Scholar
  9. 7.
    H. F. Storm, Electro-Technology, 73:62 (1963).Google Scholar
  10. 8.
    I. M. Mackintosh, Proc. IRE, 46:1229 (1958).CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • V. A. Kuz’min
    • 1
  • Yu. A. Parmenov
    • 1
  1. 1.Moscow Engineering Physics InstituteRussia

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