Current-Voltage Characteristics of p-n-p-n Structures Governed By Recombination, Generation, and Avalanche Multiplication Processes in p-n Junctions

  • V. A. Kuz’min
  • Yu. A. Parmenov


The principal parameters of the current-voltage characteristics of silicon planar thyristors are calculated taking into account the recombination, generation, and avalanche multiplication in p-n junctions. Analytic expressions are obtained for the determination of the turn-off current, critical gate current, and turn-off gain of an asymmetrical silicon planar thyristor. The dependence of the turn-off current on the gate current and the dependence of the turn-off gain on the anode current are calculated. Allowance is made for the avalanche multiplication of carriers in the central p-n junction and analytic expressions are derived for the turn-on current and the breakover voltage. It is shown that the breakover voltage of planar thyristors designed for low-voltage operation is close to the breakdown voltage of the central p-n junction, which is due to the low value of the leakage current of this junction.


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Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • V. A. Kuz’min
    • 1
  • Yu. A. Parmenov
    • 1
  1. 1.Moscow Engineering Physics InstituteRussia

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