Analysis of Processes in Multilayer Semiconductor Structures of the n-p-n-p-n-p Type
The possibilities are considered of using six-layer semiconductor structures of the n-p-n-p-n-p type as control elements in switching devices with higher permissible forward and reverse voltages than those of the corresponding p-n-p-n structures. The power losses in devices of this type need not exceed the level of losses in ordinary thyristors. An analysis is made of the switching conditions in such structures and of their static characteristics. The characteristics of the turn-on and turn-off transient processes of these devices are discussed.
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