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Influence of X-Ray Radiation on Some Parameters of p-n Junctions in Silicon

  • O. A. Klimkova
  • O. R. Niyazova

Abstract

The paper describes an investigation of the influence of irradiation with 50-keV x rays on the current-voltage I(V ) and capacitance-voltage C(V) characteristics of silicon diodes. It was found that such irradiation produced permanent changes in these characteristics.

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Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • O. A. Klimkova
    • 1
  • O. R. Niyazova
    • 1
  1. 1.Nuclear Physics InstituteAcademy of Sciences of the Uzbek SSRTashkentUzbekistan

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