Advertisement

Power of the Radiation Emitted During the Tunnel Breakdown of Silicon p-n Junctions

  • V. G. Mel’nik
Chapter

Abstract

The results are reported of measurements of the absolute output power, external quantum efficiency, and device efficiency observed during the tunnel breakdown of silicon p—n junctions. The radiation power obeyed the law 6 • 10-7exp(4.6ΔV) W/cm2 for 4-5.5 V across the junction. The device efficiency was approximately 10-5% and its quantum efficiency was 10-6 photons/hole.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literature Cited

  1. 1.
    A. G. Chynoweth and K. G. McKay, Phys. Rev., 106:418 (1957).ADSCrossRefGoogle Scholar
  2. 2.
    M. Migitaka, Solid State Electron., 8:295 (1965).ADSCrossRefGoogle Scholar
  3. 3.
    A. G. Chynoweth and K. G. McKay, Phys. Rev., 102:369 (1956).ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • V. G. Mel’nik

There are no affiliations available

Personalised recommendations