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Film Devices Prepared by the Ion Bombardment Method

  • G. A. Kachurin
  • A. E. Gorodetskii
  • V. M. Zelevinskaya
  • L. S. Smirnov
Chapter

Abstract

It is demonstrated that, in principle, it is possible to prepare photodiodes and photoresistors by the ion bombardment of thin (~1 µ) polycrystalline films of cadmium telluride. Possible applications of this method are considered.

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Literature Cited

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    G. A. Kachurin, A. E. Gorodetskii, Yu. V. Loburets, and L. S. Smirnov, Fiz. Tverd. Tela, 9:494 (1967) .Google Scholar
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    D. A. Cusano, IRE Trans. Electron Devices, ED9:504 (1962).ADSCrossRefGoogle Scholar
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    H. I. Moss, RCA Rev., 22:29 (1961) .Google Scholar
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    A. P. Landsman and R. N. Tykvenko, Radiotekhn. i Élektron., 12:503 (1967) .Google Scholar
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Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • G. A. Kachurin
    • 1
  • A. E. Gorodetskii
    • 1
  • V. M. Zelevinskaya
    • 1
  • L. S. Smirnov
    • 1
  1. 1.Institute of Semiconductor PhysicsSiberian Branch, Academy of Sciences of the USSRNovosibirskRussia

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