Recombination Mechanisms in Photosensitive Films of the PbS Group
Electrical and photoelectric properties of films of the PbS group were examined as functions of temperature and pressure. The results are explained by assuming that the forbidden band contains one deep level and some shallow levels that are completely ionized in the temperature range from 300 to 90°K. At “low” temperatures (150 to 90°K), the trapping levels become recombination levels.
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