Thermally Stimulated Currents in p-n Junctions in Gallium Phosphide
A study was made of the energy positions of impurity levels in gallium phosphide p-n structures, using thermally stimulated currents. The thermally stimulated conductivity was investigated in the range 80–300°K at various heating rates. Several methods were used to calculate the energy positions of the impurity levels and they gave consistent results. Levels at 0.27–0.3, 0.06, and 0.04 eV were found. The same levels appeared in a study of recombination radiation spectra and of the temperature dependence of the Hall coefficient. The densities and capture cross sections of these levels were calculated.
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