Advertisement

Thermally Stimulated Currents in p-n Junctions in Gallium Phosphide

  • N. M. Kolchanova
  • R. F. Mamedova
  • M. A. Mirdzhalilova
  • D. N. Nasledov

Abstract

A study was made of the energy positions of impurity levels in gallium phosphide p-n structures, using thermally stimulated currents. The thermally stimulated conductivity was investigated in the range 80–300°K at various heating rates. Several methods were used to calculate the energy positions of the impurity levels and they gave consistent results. Levels at 0.27–0.3, 0.06, and 0.04 eV were found. The same levels appeared in a study of recombination radiation spectra and of the temperature dependence of the Hall coefficient. The densities and capture cross sections of these levels were calculated.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literature Cited

  1. 1.
    M. A. Mirdzhalilova and L. G. Paritskii, Fiz. Tverd. Tela, 8:3090 (1966).Google Scholar
  2. 2.
    K. W. Böer, S. Oberländer, and J. Voigt, Ann. Physik, 2:13 0 (1958).Google Scholar
  3. 3.
    G. F. J. Garlick and A. F. Gibson, Proc. Phys. Soc. (London), 60:574 (1948).ADSCrossRefGoogle Scholar
  4. 4.
    A. P. Kulshreshtha and V. A. Goryunov, Fiz. Tverd. Tela, 8:1944 (1966).Google Scholar
  5. 5.
    R. F. Mamedova, D. N. Nasledov, and S. V. Slobodchikov, Fiz. Tekh. Poluprov., 1:509 (1967).Google Scholar

Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • N. M. Kolchanova
    • 1
  • R. F. Mamedova
    • 1
  • M. A. Mirdzhalilova
    • 1
  • D. N. Nasledov
    • 1
  1. 1.A. F. Ioffe Physicotechnical InstituteAcademy of Sciences of the USSRLeningradRussian

Personalised recommendations