Advertisement

Flux-Method Calculations of the Characteristics of Semiconductor Devices Having an Electric Field in the Base Region

  • I. M. Beskrovnyi

Abstract

A method is proposed for using the flux equations to calculate the characteristics of drift transistors. The transport factor of a drift-transistor base is calculated for exponential and actual impurity distributions in the base. It is shown that the allowance for the actual field distribution in the base, especially the retarding section, has a considerable effect on the results. For sufficiently long lifetimes, the results given by the flux method agree exactly with those obtained by solution of the diffusion equations, but the fluxmethod results are more rigorous for short lifetimes.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literature Cited

  1. 1.
    W. Shockley, Phys. Rev., 125:1570 (1962).ADSCrossRefMathSciNetGoogle Scholar
  2. 2.
    I. M. Beskrovnyi and A. A. Kostritsa, Izv. Akad. Nauk Beloruss. SSR, Ser. Fiz.-Mat. Nauk (1969).Google Scholar
  3. 3.
    I. M. Beskrovnyi and V. A. Botvin, Fiz. Tekh. Poluprov., 2:1391 (1968).Google Scholar
  4. 4.
    A. V. Krasilov and A. F. Trutko, Calculation Methods for Transistors, Energiya, Moscow (1964).Google Scholar
  5. 5.
    N. S. Spiridonov and V. I. Vertogradov, Drift Transistors, Sov. Radio, Moscow (1964).Google Scholar
  6. 6.
    G. C. Jain and R. M. S. Al-Rifai, J. Appl. Phys., 37:2401 (1966).ADSCrossRefGoogle Scholar
  7. 7.
    E. F. Pulver and J. P. McKelvey, Phys. Rev., 149:617 (1966).ADSCrossRefGoogle Scholar
  8. 8.
    D. I. Smetanina and Yu. A. Sher, Voprosy Radioélektroniki, Ser. Poluprovodnikovye Pribory, 129 (1964).Google Scholar

Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • I. M. Beskrovnyi

There are no affiliations available

Personalised recommendations