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Strain Effect in Polycrystalline Films of Indium Antimonide and Gallium Antimonide

  • I. I. Fal’ko
Chapter

Abstract

Information is given on the technique of fabricating semiconducting films of indium antimonide and gallium antimonide having p-type and n-type conduction. Studies of the strain effect and of the temperature dependence of the resistance of prototype strain gauges are reported.

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Literature Cited

  1. 1.
    G. N. Guk, Bismuth Film Resistance Strain Gauge, Abstract of Thesis, Novosibirsk (1962).Google Scholar
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    L. V. Novikov and R. S. Smirnova, Izmeritel’naya Tekhnika, No. 1, p. 33 (1967).Google Scholar
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    Yu. V. Ilisavskii, Semiconductor Strain Gauges, No. 6, Leningrad (1963).Google Scholar
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    P. S. Agalarzade and S. A. Semiletov, Kristallografiya, 8:298 (1963).Google Scholar

Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • I. I. Fal’ko

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