Threshold Energy for Electron-Hole Pair Production by Hot Electrons in GaAs
Electron multiplication in GaAs p—n junctions with various impurity concentration gradients was measured in the range of low multiplication factors, M ≤ 1.1. The p—n junctions were formed by diffusion of zinc into n-type material. The method of Chynoweth and McKay was applied to the experimental results to obtain the threshold energy for impact ionization by electrons, εin = 1.8 ± 0.1 eV, and the mean free path of hot electrons (λ = 50 Å) in the case of scattering by optical phonons. By considering zero-phonon electron transitions accompanying impact ionization, it is shown that the experimental value of ε in corresponds to that expected from the approximate band structure of GaAs.
Unable to display preview. Download preview PDF.
- 2.R. A. Logan and S. M. Sze, Proc. Eighth Intern. Conf. on Physics of Semiconductors, Kyoto, 1966, in: J. Phys. Soc. Japan, 21:Supplement, 434 (1966).Google Scholar
- 8.T. Ya. Puritis, Fiz. Tekh. Poluprov., 1:599 (1967).Google Scholar
- 16.A. A. Gutkin, É. M. Magerramov, D. N. Nasledov, and V. E. Sedov, Fiz. Tverd. Tela, 8:712 (1966).Google Scholar