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Calculation of the Current—Voltage Characteristic for a Heterojunction Tunnel Diode

  • A. I. Gubanov
  • S. N. Dobrynin

Abstract

The WKB method is used to analyze the expression for the interband tunneling by comparing the arguments of an exponential function using attenuated electron functions and the effective-mass method. A method is thus developed for calculating a tunnel transition between bands of different crystals. An expression is also derived for calculating the current—voltage characteristic of a heterojunction tunnel diode and used to make this calculation for Ge—GaAs. It is shown that the value of the current may depend considerably on the asymmetry of the space-charge layers. Moreover, a calculation for the most favorable band diagram shows a very large increase of the current.

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Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • A. I. Gubanov
    • 1
  • S. N. Dobrynin
    • 1
  1. 1.V. I. Ul’yanov (Lenin) Leningrad Institute of Electrical EngineeringRussia

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