Electroluminescence and Cathodoluminescence of p-n Junctions in GaAs

  • V. M. Lomako
  • D. S. Domanevskii
  • V. D. Tkachev


An investigation was made of the spectral distribution of the impurity (extrinsic) recombination radiation of diffused p-n junctions made of n-type GaAs crystals with a range of defect concentrations. The impurity luminescence region included bands whose maxima were located at 0.99-1.06, 1.14-1.18, 1.21-1.29, 1.36, and 1.396 eV. The 1.396 eV band was ~kT wide at 80°K and it was attributed to radiative recombination in the space-charge region of the p-n junction. A comparison of the luminescence spectra obtained by injection through the p-n junction and by electron bombardment of different regions of the junction showed that the 1.0 and 1.28 eV bands originated from the n-type region in the p-n junction. The luminescence spectrum of this region differed from the spectrum of the n-type region far from the junction. This gave rise to a difference between the luminescence spectrum of the p-n junctions and the cathodoluminescence spectrum of GaAs subjected to heat treatment.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literature Cited

  1. 1.
    M. I. Nathan, Solid State Electron., 6:425 (1963).ADSCrossRefGoogle Scholar
  2. 2.
    T. L. Larsen, Appl. Phys. Letters, 3:113 (1963).ADSCrossRefGoogle Scholar
  3. 3.
    T. N. Morgan, M. Pilkuhn, and H. Rupprecht, Phys. Rev., 138:A1551 (1965).ADSCrossRefGoogle Scholar
  4. 4.
    M. F. Millea and L.W. Aukerman, J. Appl. Phys., 37:1788 (1966).ADSCrossRefGoogle Scholar
  5. 5.
    F. D. Rosi, D. Meyerhofer, and R.B. Jensen, J. Appl. Phys., 31:1105 (1960).ADSCrossRefGoogle Scholar
  6. 6.
    Zh. I. Alferov, D. Z. Garbuzov, and E. P. Morozov, Fiz. Tverd. Tela, 8:3236 (1966).Google Scholar
  7. 7.
    D. S. Domanevskii and V.D. Tkachev, Fiz. Tekh. Poluprov., 1:377 (1967) .Google Scholar
  8. 8.
    K. Weiser and R. S. Levitt, J. Appl. Phys., 35:2431 (1964) .ADSCrossRefGoogle Scholar
  9. 9.
    B. I. Boltaks and F. S. Shishiyanu, Fiz. Tverd. Tela, 7:1021 (1965).Google Scholar
  10. 10.
    G. B. Larrabee and J. F. Osborn, J. Electrochem. Soc., 113:564 (1966).CrossRefGoogle Scholar
  11. 11.
    C. S. Fuller, H. W. Allison, and K. B. Wolfstirn, J. Phys. Chem. Solids, 25:1329 (1964);ADSCrossRefGoogle Scholar
  12. 11a.
    Y. Furukawa and C.D. Thurmond, J. Phys. Chem. Solids, 26:1535 (1965).ADSCrossRefGoogle Scholar
  13. 12.
    V. M. Lomako, V. D. Tkachev, and D. S. Domanevskii, present issue, p. 16.Google Scholar
  14. 13.
    J. Blanc, R. H. Bube, and L. R. Weisberg, J. Phys. Chem. Solids, 25:225 (1964).ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • V. M. Lomako
    • 1
  • D. S. Domanevskii
    • 1
  • V. D. Tkachev
    • 1
  1. 1.V. I. Lenin Belorussian State UniversityMinskBelarus

Personalised recommendations