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Radiative Recombination in Ge-Doped GaAs Diodes

  • C. Constantinescu
  • G. Popovici
  • P. Mihailovici
  • I. Petrescu
Chapter

Abstract

The spectral and current dependences of the luminescence of Ge-doped GaAs diodes were studied. A relation between the luminescence intensity J and the current I was found: I ∞ J1/n , where n = 5–7 for small forward currents and n = 1 for large forward currents. The exact relationship between the luminescence and the current is discussed bearing in mind the competition between possible recombination processes.

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Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • C. Constantinescu
    • 1
  • G. Popovici
    • 1
  • P. Mihailovici
    • 1
  • I. Petrescu
    • 1
  1. 1.Institute of PhysicsAcademy of Sciences of the Socialist Republic of RumaniaBucharestRumania

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