Advertisement

Influence of Cadmium Vapor Pressure on the Diffusion of Indium in CdTe

  • L. V. Maslova
  • O. A. Matveev
  • Yu. V. Rud’
  • A. K. V. Sanin
Chapter

Abstract

The influence of cadmium vapor pressure on the diffusion of indium in p-type CdTe was studied in the range 700–1000°C (the cadmium source temperature was TCd = 1000–600°C). It was found that there was an anomalous increase in the rate of diffusion at temperatures TCd ⋝ 650°C. At TCd < 650°C, the diffusion rate could be explained quantitatively using a published account of diffusion through the cadmium sublattice. At cadmium source-temperatures TCd ⋝ 650°C, a different mechanism of diffusion became predominant.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literature Cited

  1. 1.
    H. Kato and S. Takayanagi, Japan. J. Appl. Phys., 2:250 (1963).ADSCrossRefGoogle Scholar
  2. 2.
    O. A. Matveev, Yu. V. Rud’, and K. V. Sanin, Izv. Akad. Nauk SSSR, Neorg. Mater., 5:372 (1969).Google Scholar
  3. 3.
    E. N. Arkad’eva, L. V. Maslova, O. A. Matveev, S. M. Ryvkin, and Yu. V. Rud’, Fiz. Tekh. Poluprov., 2:279 (1968).Google Scholar
  4. 4.
    D. de Nobel, Philips Res. Rep., 14:361 (1959).Google Scholar

Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • L. V. Maslova
    • 1
  • O. A. Matveev
    • 1
  • Yu. V. Rud’
    • 1
  • A. K. V. Sanin
    • 1
  1. 1.A. F. Ioffe Physicotechnical InstituteAcademy of Sciences of the USSRLeningradRussia

Personalised recommendations