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Photoelectric Properties of InP p—n Junctions

  • V. V. Galavanov
  • R. M. Kundukhov
  • D. N. Nasledov
  • N. V. Siukaev

Abstract

A method for fabricating indium phosphide photocells is described. The spectral characteristic and the temperature dependence of the photo-emf and the short-circuit photocurrent are given.

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Literature Cited

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Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • V. V. Galavanov
    • 1
  • R. M. Kundukhov
    • 1
  • D. N. Nasledov
    • 1
  • N. V. Siukaev
    • 1
  1. 1.K. L. Khetagurov Severo-Osetinsk State Pedagogical InstituteOrdzhonikidzeRussia

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