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Electron Microprobe Study of Concentration Profiles in in GaP—GaAs and InP—InAs Diffused Heterojunctions

  • T. D. Dzhafarov
  • T. T. Dedegkaev
  • L. M. Dolginov

Abstract

X-ray spectroscopic microprobe analysis was used to study concentration profiles of components in linear-gradient GaP — GaAs and InP — InAs heterojunctions formed by the diffusion of phosphorus into single-crystal plates of gallium and indium arsenides.

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Literature Cited

  1. 1.
    B. I. Boltaks, Diffusion in Semiconductors, Infosearch, London (1963).Google Scholar
  2. 2.
    B. Goldstein and C. Dobin, Solid State Electronics, 5:411 (1962).CrossRefGoogle Scholar
  3. 3.
    B. Goldstein, Phys. Rev., 121:1305 (1961).ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • T. D. Dzhafarov
    • 1
  • T. T. Dedegkaev
    • 1
  • L. M. Dolginov
    • 1
  1. 1.Institute of SemiconductorsAcademy of Sciences of the USSRLeningradRussia

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