Current—Voltage Characteristics of Forward-Biased p—ni—n Silicon Diodes
A study was made of the current — voltage characteristics of forward-biased p — ni — n gold-doped n-type silicon diodes. S-type and N-type characteristics were found, depending on the temperature. In the N-type case, current oscillations were observed in the current pulse. The experimental data are analyzed by means of the thermal model of negative resistance.
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