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Current—Voltage Characteristics of Forward-Biased p—ni—n Silicon Diodes

  • Yu. A. Bykovskii
  • K. N. Vinogradov
  • V. F. Elesin
  • V. V. Zuev
Chapter

Abstract

A study was made of the current — voltage characteristics of forward-biased p — ni — n gold-doped n-type silicon diodes. S-type and N-type characteristics were found, depending on the temperature. In the N-type case, current oscillations were observed in the current pulse. The experimental data are analyzed by means of the thermal model of negative resistance.

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Literature Cited

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Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • Yu. A. Bykovskii
  • K. N. Vinogradov
  • V. F. Elesin
  • V. V. Zuev

There are no affiliations available

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