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Current—Voltage Characteristics of p-n Junctions in Indium Phosphide—Gallium Arsenide Solid Solutions

  • V. I. Osinskii
  • N. N. Sirota
  • G. G. Shienok

Abstract

Current — voltage characteristics are given for diodes made from crystals of indium phosphide — gallium arsenide solid solutions, at room and liquid-nitrogen temperatures. The characteristics degenerate to straight lines at high currents. It is shown that the voltage intercepts Ui vary with the composition of the solid solution, having a maximum at 60–70% gallium arsenide.

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Literature Cited

  1. 1.
    N. N. Sirota and V. I. Osinskii, Dokl. Akad. Nauk SSSR, 171:317 (1966).Google Scholar
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    V. I. Osinskii and N. N. Sirota, Izv. Akad. Nauk Beloruss. SSR, 3:93 (1965).Google Scholar
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    B. M. Vul, É. I. Zavaritskaya, and A. P. Shotov, F iz. Tverd. Tela, 6:1465 (1964).Google Scholar
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    L. A. Makovetskaya and N. N. Sirota, Dokl. Akad. Nauk Beloruss. SSR, No. 9, 1964.Google Scholar

Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • V. I. Osinskii
    • 1
  • N. N. Sirota
    • 1
  • G. G. Shienok
    • 1
  1. 1.Institute of Solid State and Semiconductor PhysicsAcademy of Sciences of the Belorussian SSRMinskRussian

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