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Low-Energy Recombination Radiation of p-n Junctions in GaAs

  • V. M. Lomako
  • V. D. Tkachev
  • D. S. Domanevskii

Abstract

The results are reported of an investigation of low-energy (0.3-0,7 eV) recombination radiation emitted by p-n junctions in GaAs. The diodes were produced by the diffusion of zinc in gallium arsenide with an electron density 1015-1016 cm-3. At 80°K, bands were observed at 0.36, 0.58, 0.59, 0.61, and 0.65 eV. It was found that the intensities of the bands varied strongly from sample to sample even when a batch was prepared from a single cut. This indicated a nonuniform radial distribution of the compensating impurities in the original single crystal. The 0.65 eV band was due to the presence of oxygen. The 0.36 and 0.59 eV bands were observed at room temperature. No shifts of the maxima or changes in the band profiles were found when the samples were heated to room temperature.

Literature Cited

  1. 1.
    W. J. Turner, G. D. Pettit, and N. G. Ainslie, J. Appl. Phys., 34:3274 (1963).ADSCrossRefGoogle Scholar
  2. 2.
    C. Hilsum and A. C. Rose-Innes, Semiconducting III-V Compounds, Pergamon Press, Oxford (1961) .zbMATHGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • V. M. Lomako
    • 1
  • V. D. Tkachev
    • 1
  • D. S. Domanevskii
    • 1
  1. 1.V. I. Lenin Belorussian State UniversityMinskBelarus

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