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An Investigation of Photodiode Response

  • N. Sh. Khaikin
  • M. A. Trishenkov

Abstract

This paper summarizes the basic laws of relaxation for photocarriers separated by a p-n junction. A method is proposed for measuring the parameters of this mechanism and determining its role in the experimentally observed transient processes. A suitable apparatus is described, together with a series of measurements on rectangular silicon photodiodes, and their results.

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Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • N. Sh. Khaikin
  • M. A. Trishenkov

There are no affiliations available

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