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Tunnel p-n Junctions in Indium Phosphide

  • A. N. Imenkov
  • N. V. Siukaev
  • M. K. Khadikov

Abstract

The current—voltage characteristics of indium phosphide tunnel and backward diodes were obtained and analyzed. The tunnel diodes with a negative resistance region were prepared by alloying pure tin, a mixture of tin and tellurium, or pure indium to zinc-doped InP. The backward diodes were prepared by alloying tin to cadmium-doped InP. The tunnel current density in InP diodes was found to be higher, at a given doping level, than in GaAs diodes.

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Literature Cited

  1. 1.
    N. Holonyak Jr., J. Appl. Phys., 32:130 (1961).ADSCrossRefGoogle Scholar
  2. 2.
    J. Shewchun and R. M. Williams, Phys. Rev. Letters, 15 (4):160 (1965).ADSCrossRefGoogle Scholar
  3. 3.
    O. Madelung, Physics of III–V Compounds, Wiley, New York (1964).Google Scholar

Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • A. N. Imenkov
    • 1
    • 2
  • N. V. Siukaev
    • 1
    • 2
  • M. K. Khadikov
    • 1
    • 2
  1. 1.A. F. Ioffe Physicotechnical InstituteAcademy of Sciences of the USSRLeningradRussia
  2. 2.K. L. Khetagurov Severo-Osetinsk State Pedagogical InstituteOrdzhonikidzeUkraina

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