Dependence of the Breakdown Voltage of Silicon p-n Junctions on the Surface Potential
A brief report is given of the results of an experimental investigation of the dependence of the breakdown voltage (Ubr) of silicon p-n junctions on the surface potential (Ψs). It was established that depletion of the majority carriers in the surface layer of a high-resistivity region of a diode increased the breakdown voltage. The dependence Ubr = f(Ψs) was determined for silicon p-n junctions.
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