Characteristics of Radiation Emitted During Avalanche and Tunnel Breakdown of Silicon p-n Junctions
An experimental investigation was made of the spectral characteristics of recombination radiation emitted during the avalanche and tunnel breakdown of silicon p-n junctions in the temperature range from —165 to +115°C for currents of 50–400 mA. When the temperature was lowered, the intensity of the radiation increased and the maximum of the spectral characteristic shifted in the direction of higher energies. When the current was varied, the avalanche breakdown spectrum distorted in such a way that the intensity of the long-wavelength radiation increased more rapidly with increasing current, whereas in the tunnel case it was the intensity of the short-wavelength radiation that increased more rapidly. Data are given in graphical form and a qualitative explanation of the results is suggested.
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