Filamentation of the Current in Diodes Made of Semiconductors with Deep Impurity Levels
The detection and investigation of current filaments are reported for diodes made of gold-doped silicon. The investigation was made at room temperature using two methods: a scanning light probe and the sectioning of the contacts. It was found that a filament first appeared in a limited volume and then broadened with increasing voltage across the diode. An inhomogeneous distribution of an impurity in a semiconductor produced a nonuniform broadening of the filament with increasing current, and a complex current—voltage characteristic.
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