Advertisement

Electrical Properties of α (Ge) — GaAs Heterojunctions

  • Ya. A. Fedotov
  • V. S. Zased
  • É. A. Matson
Chapter

Abstract

A study was made of the electrical properties of heterojunctions formed between single crystals of a solid solution of gallium arsenide in germanium [Ge0.85(GaAs)0.15, denoted by α(Ge)] and gallium arsenide. Optical investigations showed that the forbidden band width of α(Ge) was of the order of 1 eV. The current—voltage characteristics of the p-n α(Ge)-GaAs heterojunctions were of a form typical of backward diodes. The current—voltage characteristics of the p-p α(Ge)—GaAs heterojunctions could be accounted for by the diode rectification theory. These characteristics were used to estimate the potential barrier in the p-p heterojunctions (0.2 eV), which was close to the calculated value Ψc = 0.25 eV.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literature Cited

  1. 1.
    Yu. D. Chistyakov and É. A. Matson, Dokl. Akad. Nauk SSSR, 177:643 (1967).Google Scholar
  2. 2.
    C. Kolm, S. A. Kulin, and B. L. Averbach, Phys. Rev., 108:965 (1957).ADSCrossRefGoogle Scholar
  3. 3.
    D. A. Jenny, US Patent No. 2930239, applied for April 16, 1956; granted April 8, 1958.Google Scholar
  4. 4.
    G. W. Gobeli and F. G. Allen, Phys. Rev., 137:A245 (1965).ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • Ya. A. Fedotov
    • 1
  • V. S. Zased
    • 1
  • É. A. Matson
    • 1
  1. 1.Moscow Institute of Steel and AlloysUSSR

Personalised recommendations