Electrical Properties of α (Ge) — GaAs Heterojunctions
A study was made of the electrical properties of heterojunctions formed between single crystals of a solid solution of gallium arsenide in germanium [Ge0.85(GaAs)0.15, denoted by α(Ge)] and gallium arsenide. Optical investigations showed that the forbidden band width of α(Ge) was of the order of 1 eV. The current—voltage characteristics of the p-n α(Ge)-GaAs heterojunctions were of a form typical of backward diodes. The current—voltage characteristics of the p-p α(Ge)—GaAs heterojunctions could be accounted for by the diode rectification theory. These characteristics were used to estimate the potential barrier in the p-p heterojunctions (0.2 eV), which was close to the calculated value Ψc = 0.25 eV.
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