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1/f Noise of Surface-Barrier Diodes

  • N. I. Sablina
  • N. B. Strokan

Abstract

A study was made of the 1/f noise of surface-barrier diodes in various circuit configurations. A comparison was made of the noise characteristics of silicon surface-barrier diodes and of conventional germanium and silicon photodiodes. The results of noise measurements under photovoltaic conditions were analyzed on the basis of the fluctuations of the surface recombination velocity. It was found that the surface recombination velocity in“thin” photodiodes could be determined by comparing the noise under the short-circuit and open-circuit (photo-emf) conditions.

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Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • N. I. Sablina
    • 1
  • N. B. Strokan
    • 1
  1. 1.A. F. Ioffe Physicotechnical Institute Academy of Sciences of the USSRLeningradGermany

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