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Alloyed p-n Junctions Made of Be-Doped p-Type SiC

  • A. A. Kal’nin
  • V. V. Pasynkov
  • Yu. M. Tairov
  • D. A. Yas’kov

Abstract

A study was made of alloyed electroluminescent light sources made of Be-doped p-type SiC . Pure silicon was used as the electrode material. Nitrogen was employed as the dopant to produce the n-type region. A study was made of the current-voltage characteristics of the p-n junctions, of the lux-ampere characteristics, and of the temperature dependence of the electroluminescence yield. Estimates were made of the properties of these alloyed sources under pulse conditions. Typical forward voltage drops were 5-7 V for a working current of 1 mA. The lux-ampere characteristics were linear between 0.1 and 30 A/cm2. The electroluminescence efficiency decreased to ∼50% when the temperature was raised from room temperature to 60°C.

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Literature Cited

  1. 1.
    A. A. Kal’nin, V. V. Pasynkov, Yu. M. Tairov, and D. A. Yas’kov, Fiz. Tekh. Poluprov., 1:484 (1967).Google Scholar
  2. 2.
    G. F. Kholuyanov, Low-Voltage Electroluminescent Indicator Lamps for Transistor Circuits, Znanie, Moscow (1965).Google Scholar

Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • A. A. Kal’nin
    • 1
  • V. V. Pasynkov
    • 1
  • Yu. M. Tairov
    • 1
  • D. A. Yas’kov
    • 1
  1. 1.V. I. Ul’yanov (Lenin) Leningrad Institute of Electrical EngineeringRussia

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