Alloyed p-n Junctions Made of Be-Doped p-Type SiC
A study was made of alloyed electroluminescent light sources made of Be-doped p-type SiC . Pure silicon was used as the electrode material. Nitrogen was employed as the dopant to produce the n-type region. A study was made of the current-voltage characteristics of the p-n junctions, of the lux-ampere characteristics, and of the temperature dependence of the electroluminescence yield. Estimates were made of the properties of these alloyed sources under pulse conditions. Typical forward voltage drops were 5-7 V for a working current of 1 mA. The lux-ampere characteristics were linear between 0.1 and 30 A/cm2. The electroluminescence efficiency decreased to ∼50% when the temperature was raised from room temperature to 60°C.
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