Parameters of the Active Region in an Injection Laser
A method is suggested for the determination of the loss factor of a p-n junction and of the initial threshold current density necessary for population inversion (negative temperature state). The loss factor is given by the ratio of the slopes of the watt-ampere characteristics of a diode, recorded using two different values of the diode length or two values of the reflection coefficient of the resonator mirror. The initial threshold current density is then determined using the value of the loss factor found in this way and the threshold current densities for two values of the diode length, or for two values of the reflection coefficient. This method was employed to investigate diffused gallium arsenide diodes. The loss factor was found to be 9.6 cm-1 and the threshold current density was 690 A /cm2 for a resonator with 100% negative feedback. These two parameters were then used to calculate the initial threshold current density (485 A /cm2).
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