Electrical Properties of Diffused p-n Junctions in Indium Arsenide

  • Yu. D. Mozzhorin
  • V. I. Stafeev


A brief description is given of the method used to prepare diffused p-n junctions in indium arsenide. The results are reported of a study of the current-voltage characteristics (at 77 and 300°K) as a function of the electron density in the initial material and of the acceptor concentration gradient in the p-n junction. An estimate is made of the lifetime and diffusion length of the electrons.


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Copyright information

© Springer Science+Business Media New York 1971

Authors and Affiliations

  • Yu. D. Mozzhorin
  • V. I. Stafeev

There are no affiliations available

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