Electric-Susceptibility Mass of Free Carriers in Semiconductors

  • Jack R. Dixon
Part of the Optical Physics and Engineering book series (OPEG)

Abstract

The relationship between the electric-susceptibility mass m s of free carriers in a semiconductor and the optical properties of the material in the infrared region of the spectrum was first pointed out and applied by Spitzer and Fan [1]. As part of their general treatment of this subject, they showed that reliable values of m s could often be obtained from simple measurements of the normal reflectivity as a function of wavelength. Since that time, this method has been used widely as an experimental tool for studying the nature of charge carriers in semiconductors [2–23].

Keywords

Dielectric Constant Carrier Concentration Free Carrier Dispersion Mechanism Lead Telluride 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1969

Authors and Affiliations

  • Jack R. Dixon
    • 1
  1. 1.U. S. Naval Ordnance LaboratoryWhite Oak, Silver SpringUSA

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